A-DATA Technology AD73I1B1672EG 2GB vs SK Hynix HMA82GR8AMR4N-TF 16GB

总分

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

总分

SK Hynix HMA82GR8AMR4N-TF 16GB

SK Hynix HMA82GR8AMR4N-TF 16GB

差异规格评论

差异

A-DATA Technology AD73I1B1672EG 2GB

需要考虑的原因
A-DATA Technology AD73I1B1672EG 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 37

左右 30% 更低的延时
更快的读取速度，GB/s

12.2 10.4

测试中的平均数值
更快的写入速度，GB/s

8.5 7.9

测试中的平均数值

SK Hynix HMA82GR8AMR4N-TF 16GB

需要考虑的原因
SK Hynix HMA82GR8AMR4N-TF 16GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AD73I1B1672EG 2GB

SK Hynix HMA82GR8AMR4N-TF 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 37
读取速度，GB/s

12.2 10.4
写入速度，GB/s

8.5 7.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1677 2230

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378A1G43EB1-CRC 8GB

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Corsair CMW64GX4M8Z2933C16 8GB

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Kingston KVR16N11/8-SP 8GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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A-DATA Technology AD73I1B1672EG 2GB

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Crucial Technology CT32G4SFD832A.C16FB 32GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Tanbassh 8G 2666MHZ 8GB

Tanbassh 8G 2666MHZ 8GB

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Wilk Elektronik S.A. GR2133D464L15S/4G 4GB

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Kingston 99U5471-020.A00LF 4GB

Kingston 99U5471-020.A00LF 4GB

G Skill Intl F4-4000C19-16GTZSW 16GB

G Skill Intl F4-4000C19-16GTZSW 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N