A-DATA Technology AD73I1C1674EV 4GB vs Crucial Technology CT8G4SFD8213.C16FHP 8GB

总分

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分

Crucial Technology CT8G4SFD8213.C16FHP 8GB

Crucial Technology CT8G4SFD8213.C16FHP 8GB

差异规格评论

差异

A-DATA Technology AD73I1C1674EV 4GB

需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB

报告一个错误

Crucial Technology CT8G4SFD8213.C16FHP 8GB

需要考虑的原因
Crucial Technology CT8G4SFD8213.C16FHP 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 40

左右 -3% 更低的延时
更快的读取速度，GB/s

12.8 11.3

测试中的平均数值
更快的写入速度，GB/s

10.6 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AD73I1C1674EV 4GB

Crucial Technology CT8G4SFD8213.C16FHP 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 39
读取速度，GB/s

11.3 12.8
写入速度，GB/s

7.5 10.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1654 2423

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMSX4GX3M1A1600C9 4GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Kingston KF3200C16D4/32GX 32GB

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A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Samsung M393A4K40BB2-CTD 32GB

Samsung M393A4K40BB2-CTD 32GB

G Skill Intl F5-6000J3636F16G 16GB

G Skill Intl F5-6000J3636F16G 16GB

Kingston 99U5678-029.A00G 8GB

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Kingston 99U5403-036.A00G 4GB

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Kingston 9905712-009.A00G 16GB

Kingston 9905712-009.A00G 16GB

Samsung M393A1G40DB0-CPB 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208