A-DATA Technology AD73I1C1674EV 4GB vs G Skill Intl F4-3000C15-8GTZ 8GB

总分

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分

G Skill Intl F4-3000C15-8GTZ 8GB

G Skill Intl F4-3000C15-8GTZ 8GB

差异规格评论

差异

A-DATA Technology AD73I1C1674EV 4GB

需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB

报告一个错误

G Skill Intl F4-3000C15-8GTZ 8GB

需要考虑的原因
G Skill Intl F4-3000C15-8GTZ 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 40

左右 -38% 更低的延时
更快的读取速度，GB/s

18.5 11.3

测试中的平均数值
更快的写入速度，GB/s

14.6 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AD73I1C1674EV 4GB

G Skill Intl F4-3000C15-8GTZ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 29
读取速度，GB/s

11.3 18.5
写入速度，GB/s

7.5 14.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1654 3313

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMW16GX4M2K4000C19 8GB

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Crucial Technology CT25664BA160B.C16F 2GB

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G Skill Intl F4-3200C14-16GTRS 16GB

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Samsung 1600 CL10 Series 8GB

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Crucial Technology BLS16G4D240FSC.16FBD 16GB

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Samsung 1600 CL10 Series 8GB

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Corsair CMH32GX4M2Z3600C18 16GB

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Samsung SF4721G4CKHH6DFSDS 8GB

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PNY Electronics PNY 2GB

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Crucial Technology BL8G32C16U4W.8FE 8GB

Crucial Technology BL8G32C16U4W.8FE 8GB

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Kingston HP16D3LS1KBGH/4G 4GB

Corsair CMD16GX4M2B2400C10 8GB

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Kingston 99U5403-083.A00LF 8GB

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Kingston 9965684-013.A00G 8GB

Kingston 9965684-013.A00G 8GB

Kingston KTC1G-UDIMM 1GB

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G Skill Intl F4-3600C17-16GTZ 16GB