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A-DATA Technology AD73I1C1674EV 4GB
Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

A-DATA Technology AD73I1C1674EV 4GB vs Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

总分
star star star star star
A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分
star star star star star
Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

差异 规格 评论

差异

A-DATA Technology AD73I1C1674EV 4GB 需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB
报告一个错误
Gold Key Technology Co Ltd NMSO480E82-3200E 8GB 需要考虑的原因
Gold Key Technology Co Ltd NMSO480E82-3200E 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 40
    左右 -25% 更低的延时
  • 更快的读取速度，GB/s
    17.3 left arrow 11.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.3 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AD73I1C1674EV 4GB
Gold Key Technology Co Ltd NMSO480E82-3200E 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 32
  • 读取速度，GB/s
    11.3 left arrow 17.3
  • 写入速度，GB/s
    7.5 left arrow 14.3
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1654 left arrow 3208

A-DATA Technology AD73I1C1674EV 4GB RAM的比较

Samsung M471B5273EB0-CK0 4GB
KingSpec KingSpec 16GB

Gold Key Technology Co Ltd NMSO480E82-3200E 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M395T2863QZ4-CF76 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Gold Key Technology Co Ltd NMSO480E82-3200E 8GB
Gold Key Technology Co Ltd NMSO480E82-3200E 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
G Skill Intl F4-3000C15-4GRR 4GB
G Skill Intl F4-3000C15-4GRR 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMW128GX4M4D3000C16 32GB
Corsair CMW128GX4M4D3000C16 32GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
A-DATA Technology AO1P24HC4R1-BUYS 4GB
A-DATA Technology AO1P24HC4R1-BUYS 4GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
G Skill Intl F4-3866C18-8GTZ 8GB
G Skill Intl F4-3866C18-8GTZ 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
SK Hynix HMA82GR7MFR8N-UH 16GB
SK Hynix HMA82GR7MFR8N-UH 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Samsung M378A5244CB0-CRC 4GB
Samsung M378A5244CB0-CRC 4GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Corsair CMSX32GX4M1A2666C18 32GB
Corsair CMSX32GX4M1A2666C18 32GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Patriot Memory (PDP Systems) PSD48G213381S 8GB
Patriot Memory (PDP Systems) PSD48G213381S 8GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Kingston HP32D4S2S1ME-4 4GB
Kingston HP32D4S2S1ME-4 4GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Kingmax Semiconductor GLMH23F-18MCIA------ 16GB
Kingmax Semiconductor GLMH23F-18MCIA------ 16GB
内存RAM
Samsung M3 91T2953GZ3-CF7 1GB
Samsung M3 91T2953GZ3-CF7 1GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Ramaxel Technology RMSA3260MD78HAF-2666 8GB
Ramaxel Technology RMSA3260MD78HAF-2666 8GB
内存RAM