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A-DATA Technology AD73I1C1674EV 4GB
Golden Empire CL16-18-18 D4-3200 8GB

A-DATA Technology AD73I1C1674EV 4GB vs Golden Empire CL16-18-18 D4-3200 8GB

总分
star star star star star
A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分
star star star star star
Golden Empire CL16-18-18 D4-3200 8GB

Golden Empire CL16-18-18 D4-3200 8GB

差异 规格 评论

差异

A-DATA Technology AD73I1C1674EV 4GB 需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB
报告一个错误
Golden Empire CL16-18-18 D4-3200 8GB 需要考虑的原因
Golden Empire CL16-18-18 D4-3200 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 40
    左右 -43% 更低的延时
  • 更快的读取速度，GB/s
    18.2 left arrow 11.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.2 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AD73I1C1674EV 4GB
Golden Empire CL16-18-18 D4-3200 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 28
  • 读取速度，GB/s
    11.3 left arrow 18.2
  • 写入速度，GB/s
    7.5 left arrow 14.2
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1654 left arrow 3463

A-DATA Technology AD73I1C1674EV 4GB RAM的比较

Samsung M471B5273EB0-CK0 4GB
KingSpec KingSpec 16GB

Golden Empire CL16-18-18 D4-3200 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP112U64CP8-S5 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Golden Empire CL16-18-18 D4-3200 8GB
Golden Empire CL16-18-18 D4-3200 8GB
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
Corsair CMW32GX4M4C3600C18 8GB
Corsair CMW32GX4M4C3600C18 8GB
内存RAM
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
Kingston ACR24D4U7D8MB-16 16GB
Kingston ACR24D4U7D8MB-16 16GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
G Skill Intl F4-2400C17-8GFT 8GB
G Skill Intl F4-2400C17-8GFT 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3200C16-8GVS 8GB
G Skill Intl F4-3200C16-8GVS 8GB
内存RAM
Mushkin 991763 (996763) 4GB
Mushkin 991763 (996763) 4GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT16G4DFD824A.C16FBD 16GB
Crucial Technology CT16G4DFD824A.C16FBD 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CM4X8GD3000C16K4D 8GB
Corsair CM4X8GD3000C16K4D 8GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Essencore Limited IM48GU88N24-FFFHAB 8GB
Essencore Limited IM48GU88N24-FFFHAB 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Ramaxel Technology RMUA5110ME78HAF-2666 8GB
Ramaxel Technology RMUA5110ME78HAF-2666 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-3000C15-8GTZB 8GB
G Skill Intl F4-3000C15-8GTZB 8GB
内存RAM
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT51264BA1339.D16F 4GB
Corsair CMK8GX4M2A2400C14 4GB
Corsair CMK8GX4M2A2400C14 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMW64GX4M4C3466C16 16GB
Corsair CMW64GX4M4C3466C16 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Panram International Corporation PUD42400C154G2NJK 4GB
Panram International Corporation PUD42400C154G2NJK 4GB
内存RAM