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A-DATA Technology AD73I1C1674EV 4GB
Kingston HP26D4S9D8MJ-16 16GB

A-DATA Technology AD73I1C1674EV 4GB vs Kingston HP26D4S9D8MJ-16 16GB

总分
star star star star star
A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分
star star star star star
Kingston HP26D4S9D8MJ-16 16GB

Kingston HP26D4S9D8MJ-16 16GB

差异 规格 评论

差异

A-DATA Technology AD73I1C1674EV 4GB 需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    40 left arrow 119
    左右 66% 更低的延时
  • 更快的读取速度，GB/s
    11.3 left arrow 1.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.5 left arrow 2.0
    测试中的平均数值
Kingston HP26D4S9D8MJ-16 16GB 需要考虑的原因
Kingston HP26D4S9D8MJ-16 16GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AD73I1C1674EV 4GB
Kingston HP26D4S9D8MJ-16 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 119
  • 读取速度，GB/s
    11.3 left arrow 1.8
  • 写入速度，GB/s
    7.5 left arrow 2.0
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1654 left arrow 447

A-DATA Technology AD73I1C1674EV 4GB RAM的比较

Samsung M471B5273EB0-CK0 4GB
KingSpec KingSpec 16GB

Kingston HP26D4S9D8MJ-16 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Kingston HP26D4S9D8MJ-16 16GB
Kingston HP26D4S9D8MJ-16 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
UMAX Technology D4-2666-8GB-1024X8-L 8GB
UMAX Technology D4-2666-8GB-1024X8-L 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
SK Hynix HMA82GR7MFR4N-UH 16GB
SK Hynix HMA82GR7MFR4N-UH 16GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Kllisre 99P5428-002.A00LF 8GB
Kllisre 99P5428-002.A00LF 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Apacer Technology 78.CAGPN.AZ50C 8GB
Apacer Technology 78.CAGPN.AZ50C 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Micron Technology 36ASF2G72PZ-2G4AT 16GB
Micron Technology 36ASF2G72PZ-2G4AT 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Corsair CMK16GX4M1A2400C16 16GB
Corsair CMK16GX4M1A2400C16 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Wilk Elektronik S.A. IR2133D464L15S/8G 8GB
Wilk Elektronik S.A. IR2133D464L15S/8G 8GB
内存RAM
Kingston KHX1600C9S3L/8G 8GB
Kingston KHX1600C9S3L/8G 8GB
Transcend Information TS1GLH72V1H 8GB
Transcend Information TS1GLH72V1H 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Corsair CM4X16GE2400C16S4 16GB
Corsair CM4X16GE2400C16S4 16GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Crucial Technology CT8G4DFS824A.M8FD 8GB
Crucial Technology CT8G4DFS824A.M8FD 8GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Crucial Technology BL16G26C16U4W.16FE 16GB
Crucial Technology BL16G26C16U4W.16FE 16GB
内存RAM