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A-DATA Technology AD73I1C1674EV 4GB
Kingston HX426C16FB2/8-SP 8GB

A-DATA Technology AD73I1C1674EV 4GB vs Kingston HX426C16FB2/8-SP 8GB

总分
star star star star star
A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分
star star star star star
Kingston HX426C16FB2/8-SP 8GB

Kingston HX426C16FB2/8-SP 8GB

差异 规格 评论

差异

A-DATA Technology AD73I1C1674EV 4GB 需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    40 left arrow 50
    左右 20% 更低的延时
  • 更快的读取速度，GB/s
    11.3 left arrow 10
    测试中的平均数值
Kingston HX426C16FB2/8-SP 8GB 需要考虑的原因
Kingston HX426C16FB2/8-SP 8GB
报告一个错误
  • 更快的写入速度，GB/s
    7.8 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AD73I1C1674EV 4GB
Kingston HX426C16FB2/8-SP 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 50
  • 读取速度，GB/s
    11.3 left arrow 10.0
  • 写入速度，GB/s
    7.5 left arrow 7.8
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1654 left arrow 2159

A-DATA Technology AD73I1C1674EV 4GB RAM的比较

Samsung M471B5273EB0-CK0 4GB
KingSpec KingSpec 16GB

Kingston HX426C16FB2/8-SP 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
A-DATA Technology AD73I1C1674EV 4GB
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内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
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内存RAM
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内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
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内存RAM
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内存RAM
Samsung M471B5673FH0-CF8 2GB
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G Skill Intl F4-3000C16-8GTZR 8GB
G Skill Intl F4-3000C16-8GTZR 8GB
内存RAM
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内存RAM
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Crucial Technology BLS8G4D240FSC.16FBR2 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
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Crucial Technology CT8G4SFS6266.M4FB 8GB
内存RAM