A-DATA Technology AD73I1C1674EV 4GB vs Kingston KHX3600C17D4/16GX 16GB

总分

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分

Kingston KHX3600C17D4/16GX 16GB

Kingston KHX3600C17D4/16GX 16GB

差异规格评论

差异

A-DATA Technology AD73I1C1674EV 4GB

需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB

报告一个错误

Kingston KHX3600C17D4/16GX 16GB

需要考虑的原因
Kingston KHX3600C17D4/16GX 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 40

左右 -43% 更低的延时
更快的读取速度，GB/s

18.4 11.3

测试中的平均数值
更快的写入速度，GB/s

15.9 7.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AD73I1C1674EV 4GB

Kingston KHX3600C17D4/16GX 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 28
读取速度，GB/s

11.3 18.4
写入速度，GB/s

7.5 15.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1654 3785

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology M2Y51264TU88B0B-3C 512MB

Transcend Information AQD-D4U4GN21-SG 4GB

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Micron Technology 4ATF1G64HZ-3G2B2 8GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Corsair CMK16GX4M2A2800C16 8GB

Corsair CMK16GX4M2A2800C16 8GB

SK Hynix HMT351S6CFR8C-PB 4GB

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Patriot Memory (PDP Systems) 4000 C19 Series 8GB

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

Samsung M471B1G73EB0-YK0 8GB

Samsung M471B1G73EB0-YK0 8GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-TF 32GB

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