A-DATA Technology AD73I1C1674EV 4GB vs Micron Technology 4ATF1G64HZ-3G2B2 8GB

总分

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分

Micron Technology 4ATF1G64HZ-3G2B2 8GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

差异规格评论

差异

A-DATA Technology AD73I1C1674EV 4GB

需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB

报告一个错误

Micron Technology 4ATF1G64HZ-3G2B2 8GB

需要考虑的原因
Micron Technology 4ATF1G64HZ-3G2B2 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 40

左右 -3% 更低的延时
更快的读取速度，GB/s

16.1 11.3

测试中的平均数值
更快的写入速度，GB/s

11.9 7.5

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AD73I1C1674EV 4GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 39
读取速度，GB/s

11.3 16.1
写入速度，GB/s

7.5 11.9
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1654 2782

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL16G36C16U4W.M8FB1 16GB

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Corsair CMK16GX4M1C3000C16 16GB

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Qimonda 64T128020EDL2.5C2 1GB

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Corsair CMK16GX4M2L3000C15 8GB

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SK Hynix HMT325S6CFR8C-PB 2GB

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Corsair CMY16GX3M4A2133C8 4GB

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Micron Technology 8ATF1G64HZ-2G6E1 8GB

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Kingston HP669238-071-HYC 4GB

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G Skill Intl F4-3600C14-16GTZRA 16GB

G Skill Intl F4-3600C14-16GTZRA 16GB

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SK Hynix HMT351S6BFR8C-H9 4GB

G Skill Intl F4-3600C17-16GTZSW 16GB

G Skill Intl F4-3600C17-16GTZSW 16GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Smart Modular SF4641G8CK8IWGKSEG 8GB

Smart Modular SF4641G8CK8IWGKSEG 8GB

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Kingston 99U5474-028.A00LF 4GB

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A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

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InnoDisk Corporation M4SI-8GS1NC0K-C 8GB