A-DATA Technology AD73I1C1674EV 4GB vs OCMEMORY OCM2933CL16-16GBH 16GB

总分

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分

OCMEMORY OCM2933CL16-16GBH 16GB

OCMEMORY OCM2933CL16-16GBH 16GB

差异规格评论

差异

A-DATA Technology AD73I1C1674EV 4GB

需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB

报告一个错误

低于PassMark测试中的延时，ns

40 59

左右 32% 更低的延时

OCMEMORY OCM2933CL16-16GBH 16GB

需要考虑的原因
OCMEMORY OCM2933CL16-16GBH 16GB

报告一个错误

更快的读取速度，GB/s

20.1 11.3

测试中的平均数值
更快的写入速度，GB/s

10.6 7.5

测试中的平均数值
更高的内存带宽，mbps

23400 10600

左右 2.21 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AD73I1C1674EV 4GB

OCMEMORY OCM2933CL16-16GBH 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 59
读取速度，GB/s

11.3 20.1
写入速度，GB/s

7.5 10.6
内存带宽，mbps

10600 23400

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-23400, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

1654 2382

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M391B5673EH1-CH9 2GB

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Micron Technology 9ASF1G72PZ-2G9E1 8GB

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Corsair CMD64GX4M8A2800C16 8GB

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SK Hynix HYMP112U64CP8-Y5 1GB

Crucial Technology BLS8G4D240FSA.M16FAD 8GB

Crucial Technology BLS8G4D240FSA.M16FAD 8GB