A-DATA Technology AD73I1C1674EV 4GB vs Patriot Memory (PDP Systems) 4133 C19 Series 8GB

总分

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分

Patriot Memory (PDP Systems) 4133 C19 Series 8GB

Patriot Memory (PDP Systems) 4133 C19 Series 8GB

差异规格评论

差异

A-DATA Technology AD73I1C1674EV 4GB

需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB

报告一个错误

Patriot Memory (PDP Systems) 4133 C19 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 4133 C19 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 40

左右 -54% 更低的延时
更快的读取速度，GB/s

19 11.3

测试中的平均数值
更快的写入速度，GB/s

16.6 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AD73I1C1674EV 4GB

Patriot Memory (PDP Systems) 4133 C19 Series 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 26
读取速度，GB/s

11.3 19.0
写入速度，GB/s

7.5 16.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1654 3818

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Ramaxel Technology RMSA3270MB86H9F2400 4GB

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G Skill Intl F4-3200C16-16GVK 16GB

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Kingston 9905584-016.A00LF 4GB

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Qimonda 72T128420EFA3SB2 1GB

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SK Hynix HMA851S6CJR6N-VK 4GB

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SK Hynix HYMP164U64CP6-Y5 512MB

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TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

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Gloway International (HK) STK2133C15-8GB 8GB

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Samsung M3 78T5663RZ3-CF7 2GB

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Corsair CMD16GX4M4B3600C18 4GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

Crucial Technology CT8G4DFRA266.C4FE 8GB

Crucial Technology CT8G4DFRA266.C4FE 8GB