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A-DATA Technology AD73I1C1674EV 4GB
Samsung 18ASF1G72PDZ-2G1B1 16GB

A-DATA Technology AD73I1C1674EV 4GB vs Samsung 18ASF1G72PDZ-2G1B1 16GB

总分
star star star star star
A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分
star star star star star
Samsung 18ASF1G72PDZ-2G1B1 16GB

Samsung 18ASF1G72PDZ-2G1B1 16GB

差异 规格 评论

差异

A-DATA Technology AD73I1C1674EV 4GB 需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB
报告一个错误
  • 更快的读取速度，GB/s
    11.3 left arrow 9.8
    测试中的平均数值
Samsung 18ASF1G72PDZ-2G1B1 16GB 需要考虑的原因
Samsung 18ASF1G72PDZ-2G1B1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 40
    左右 -25% 更低的延时
  • 更快的写入速度，GB/s
    8.6 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AD73I1C1674EV 4GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 32
  • 读取速度，GB/s
    11.3 left arrow 9.8
  • 写入速度，GB/s
    7.5 left arrow 8.6
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1654 left arrow 2271

A-DATA Technology AD73I1C1674EV 4GB RAM的比较

Samsung M471B5273EB0-CK0 4GB
KingSpec KingSpec 16GB

Samsung 18ASF1G72PDZ-2G1B1 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston HX316C10F/8 8GB
Kingston HX316C10F/8 8GB
Corsair CMU16GX4M2D3000C16 8GB
Corsair CMU16GX4M2D3000C16 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston KF3600C16D4/16GX 16GB
Kingston KF3600C16D4/16GX 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology BLS16G4D26BFST.16FD 16GB
Crucial Technology BLS16G4D26BFST.16FD 16GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Micron Technology 8ATF1G64HZ-2G2G1 8GB
Micron Technology 8ATF1G64HZ-2G2G1 8GB
内存RAM
Apacer Technology 78.B1GET.AU00C 4GB
Apacer Technology 78.B1GET.AU00C 4GB
InnoDisk Corporation M4C0-AGS1TCSJ 16GB
InnoDisk Corporation M4C0-AGS1TCSJ 16GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Smart Modular SF464128CKHIWDFSEG 4GB
Smart Modular SF464128CKHIWDFSEG 4GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Avant Technology W642GU42J2320NH 16GB
Avant Technology W642GU42J2320NH 16GB
内存RAM
Kllisre DDR4-8GB 8GB
Kllisre DDR4-8GB 8GB
KingSpec KingSpec 16GB
KingSpec KingSpec 16GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
SK Hynix HMA82GS6DJR8N-VK 16GB
SK Hynix HMA82GS6DJR8N-VK 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Transcend Information TS512MLH64V1H 4GB
Transcend Information TS512MLH64V1H 4GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Corsair CMK16GX4M2Z2400C16 8GB
Corsair CMK16GX4M2Z2400C16 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-4000C18-8GTZKW 8GB
G Skill Intl F4-4000C18-8GTZKW 8GB
内存RAM
Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173EB0-YK0 4GB
内存RAM