A-DATA Technology AD73I1C1674EV 4GB vs SK Hynix HMA851S6AFR6N-UH 4GB

总分

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分

SK Hynix HMA851S6AFR6N-UH 4GB

SK Hynix HMA851S6AFR6N-UH 4GB

差异规格评论

差异

A-DATA Technology AD73I1C1674EV 4GB

需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB

报告一个错误

SK Hynix HMA851S6AFR6N-UH 4GB

需要考虑的原因
SK Hynix HMA851S6AFR6N-UH 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 40

左右 -5% 更低的延时
更快的读取速度，GB/s

13.8 11.3

测试中的平均数值
更快的写入速度，GB/s

9.8 7.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AD73I1C1674EV 4GB

SK Hynix HMA851S6AFR6N-UH 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 38
读取速度，GB/s

11.3 13.8
写入速度，GB/s

7.5 9.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1654 2073

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3200C16-32GTZN 32GB

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Apacer Technology 78.A1GC6.9H10C 2GB

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Samsung M471A1G43EB1-CPB 8GB

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Samsung M393B1K70CH0-CH9 8GB

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Crucial Technology CT16G4DFD8266.C16FP 16GB

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Kingston K531R8-MIN 4GB

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Crucial Technology CT8G4SFD8213.C16FDD2 8GB

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Corsair CMU32GX4M2A2666C16 16GB

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G Skill Intl F4-2133C15-8GVK 8GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Crucial Technology CT8G4SFS8266.M8FE 8GB

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Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

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Kingston KVR800D2N6/2G 2GB

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Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

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