A-DATA Technology AD73I1C1674EV 4GB vs SK Hynix HMT351S6EFR8A-PB 4GB

总分

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分

SK Hynix HMT351S6EFR8A-PB 4GB

SK Hynix HMT351S6EFR8A-PB 4GB

差异规格评论

差异

A-DATA Technology AD73I1C1674EV 4GB

需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB

报告一个错误

低于PassMark测试中的延时，ns

40 46

左右 13% 更低的延时

SK Hynix HMT351S6EFR8A-PB 4GB

需要考虑的原因
SK Hynix HMT351S6EFR8A-PB 4GB

报告一个错误

更快的读取速度，GB/s

12.5 11.3

测试中的平均数值
更快的写入速度，GB/s

9.3 7.5

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AD73I1C1674EV 4GB

SK Hynix HMT351S6EFR8A-PB 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

40 46
读取速度，GB/s

11.3 12.5
写入速度，GB/s

7.5 9.3
内存带宽，mbps

10600 12800

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

7-7-7-20 / 1333 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

1654 2048

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-4266C17-16GTZRB 16GB

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SK Hynix HMT351S6EFR8A-PB 4GB

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G Skill Intl F4-4400C18-8GTZR 8GB

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Samsung M393B2G70BH0-CK0 16GB

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Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

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Kingston 9965662-002.A01G 16GB

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Samsung M3 78T3354BZ0-CCC 256MB

Kingston 9905624-022.A00G 8GB

Kingston 9905624-022.A00G 8GB