A-DATA Technology ADOVE1A0834E 1GB vs Avant Technology W642GU44J2320NC 16GB

总分

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分

Avant Technology W642GU44J2320NC 16GB

Avant Technology W642GU44J2320NC 16GB

差异规格评论

差异

A-DATA Technology ADOVE1A0834E 1GB

需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB

报告一个错误

Avant Technology W642GU44J2320NC 16GB

需要考虑的原因
Avant Technology W642GU44J2320NC 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 94

左右 -194% 更低的延时
更快的读取速度，GB/s

19.5 1

测试中的平均数值
更快的写入速度，GB/s

14.6 1,165.4

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

A-DATA Technology ADOVE1A0834E 1GB

Avant Technology W642GU44J2320NC 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

94 32
读取速度，GB/s

1,882.0 19.5
写入速度，GB/s

1,165.4 14.6
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

305 3572

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

G Skill Intl F4-3000C16-16GVRB 16GB

G Skill Intl F4-3000C16-16GVRB 16GB

Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

DSL Memory CIR-W4SUSS2408G 8GB

DSL Memory CIR-W4SUSS2408G 8GB

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Samsung M393A2K40CB1-CRC 16GB

Samsung M393A2K40CB1-CRC 16GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Micron Technology 8ATF51264HZ-2G1B1 4GB

Micron Technology 8ATF51264HZ-2G1B1 4GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

SK Hynix HMA81GS6CJR8N-UH 8GB

SK Hynix HMA81GS6CJR8N-UH 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

G Skill Intl F4-3866C18-8GTZSW 8GB

G Skill Intl F4-3866C18-8GTZSW 8GB

Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

Micron Technology CT8G4DFD8213.16FA2 8GB

Micron Technology CT8G4DFD8213.16FA2 8GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

G Skill Intl F4-3600C14-8GTZN 8GB

G Skill Intl F4-3600C14-8GTZN 8GB

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

Crucial Technology CB8GU2400.C8D 8GB

Crucial Technology CB8GU2400.C8D 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP112U64CP8-Y5 1GB

Hynix Semiconductor (Hyundai Electronics) HYMP112U64CP8

Kingston 9905701-004.A00G 16GB

Kingston 9905701-004.A00G 16GB

Kllisre KRE-D3U1600M/8G 8GB

Kllisre KRE-D3U1600M/8G 8GB

Samsung M471A5143EB0-CPB 4GB

Samsung M471A5143EB0-CPB 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

G Skill Intl F4-3200C15-8GTZSK 8GB

G Skill Intl F4-3200C15-8GTZSK 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

V-GEN D4S8GL30A8TS5 8GB

V-GEN D4S8GL30A8TS5 8GB

Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

Micron Technology 16ATF2G64HZ-2G6J1 16GB

Micron Technology 16ATF2G64HZ-2G6J1 16GB