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A-DATA Technology ADOVE1A0834E 1GB
Corsair CMK16GX4M1D3000C16 16GB

A-DATA Technology ADOVE1A0834E 1GB vs Corsair CMK16GX4M1D3000C16 16GB

总分
star star star star star
A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分
star star star star star
Corsair CMK16GX4M1D3000C16 16GB

Corsair CMK16GX4M1D3000C16 16GB

差异 规格 评论

差异

A-DATA Technology ADOVE1A0834E 1GB 需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB
报告一个错误
Corsair CMK16GX4M1D3000C16 16GB 需要考虑的原因
Corsair CMK16GX4M1D3000C16 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 94
    左右 -213% 更低的延时
  • 更快的读取速度，GB/s
    16.5 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.7 left arrow 1,165.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology ADOVE1A0834E 1GB
Corsair CMK16GX4M1D3000C16 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    94 left arrow 30
  • 读取速度，GB/s
    1,882.0 left arrow 16.5
  • 写入速度，GB/s
    1,165.4 left arrow 11.7
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    305 left arrow 3194

A-DATA Technology ADOVE1A0834E 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB

Corsair CMK16GX4M1D3000C16 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Corsair CMK16GX4M1D3000C16 16GB
Corsair CMK16GX4M1D3000C16 16GB
内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
G Skill Intl F4-2800C15-8GTXG 8GB
G Skill Intl F4-2800C15-8GTXG 8GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Kingston K6VDX7-HYD 8GB
Kingston K6VDX7-HYD 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-2666C18-32GVK 32GB
G Skill Intl F4-2666C18-32GVK 32GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Kingston 9905700-025.A00G 8GB
Kingston 9905700-025.A00G 8GB
内存RAM
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Crucial Technology CT8G4DFS832A.C8FE 8GB
Crucial Technology CT8G4DFS832A.C8FE 8GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Crucial Technology BLS4G4D240FSE.8FBD2 4GB
Crucial Technology BLS4G4D240FSE.8FBD2 4GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Panram International Corporation W4U2400PS-8G 8GB
Panram International Corporation W4U2400PS-8G 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Micron Technology 36ASF2G72PZ-2G4AT 16GB
Micron Technology 36ASF2G72PZ-2G4AT 16GB
内存RAM
Kingston 99U5428-046.A00LF 4GB
Kingston 99U5428-046.A00LF 4GB
A-DATA Technology AM1U16BC4P2-B19B 4GB
A-DATA Technology AM1U16BC4P2-B19B 4GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3000C16-16GSXFB 16GB
G Skill Intl F4-3000C16-16GSXFB 16GB
内存RAM