A-DATA Technology ADOVE1A0834E 1GB vs Corsair CMK32GX4M4B3600C18 8GB

总分

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分

Corsair CMK32GX4M4B3600C18 8GB

Corsair CMK32GX4M4B3600C18 8GB

差异规格评论

差异

A-DATA Technology ADOVE1A0834E 1GB

需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB

报告一个错误

Corsair CMK32GX4M4B3600C18 8GB

需要考虑的原因
Corsair CMK32GX4M4B3600C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 94

左右 -194% 更低的延时
更快的读取速度，GB/s

16.8 1

测试中的平均数值
更快的写入速度，GB/s

14.4 1,165.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology ADOVE1A0834E 1GB

Corsair CMK32GX4M4B3600C18 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

94 32
读取速度，GB/s

1,882.0 16.8
写入速度，GB/s

1,165.4 14.4
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

305 3401

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF1G64AZ-2G3H1 8GB

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Teikon TMA851U6AFR6N-UHHC 4GB

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G Skill Intl F4-3200C16-16GTZA 16GB

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A-DATA Technology AD73I1B1672EG 2GB

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Crucial Technology CT51264BA1339.C16F 4GB

Maxsun MSD44G24Q3 4GB

Maxsun MSD44G24Q3 4GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Corsair CMR32GX4M4C3600C18 8GB

Corsair CMR32GX4M4C3600C18 8GB

Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

Micron Technology AFLD48VH1P 8GB

Micron Technology AFLD48VH1P 8GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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G Skill Intl F4-3200C15-16GTZKW 16GB