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A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology BL8G26C16U4W.8FD 8GB

A-DATA Technology ADOVE1A0834E 1GB vs Crucial Technology BL8G26C16U4W.8FD 8GB

总分
star star star star star
A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分
star star star star star
Crucial Technology BL8G26C16U4W.8FD 8GB

Crucial Technology BL8G26C16U4W.8FD 8GB

差异 规格 评论

差异

A-DATA Technology ADOVE1A0834E 1GB 需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB
报告一个错误
Crucial Technology BL8G26C16U4W.8FD 8GB 需要考虑的原因
Crucial Technology BL8G26C16U4W.8FD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 94
    左右 -224% 更低的延时
  • 更快的读取速度，GB/s
    16.2 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.0 left arrow 1,165.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology BL8G26C16U4W.8FD 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    94 left arrow 29
  • 读取速度，GB/s
    1,882.0 left arrow 16.2
  • 写入速度，GB/s
    1,165.4 left arrow 13.0
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    305 left arrow 3221

A-DATA Technology ADOVE1A0834E 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB

Crucial Technology BL8G26C16U4W.8FD 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology BL8G26C16U4W.8FD 8GB
Crucial Technology BL8G26C16U4W.8FD 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Samsung M378A2K43DB1-CTD 16GB
Samsung M378A2K43DB1-CTD 16GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
SK Hynix HMA82GU6CJR8N-VK 16GB
SK Hynix HMA82GU6CJR8N-VK 16GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
InnoDisk Corporation 16GB
InnoDisk Corporation 16GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Golden Empire CL17-17-17 D4-2400 16GB
Golden Empire CL17-17-17 D4-2400 16GB
内存RAM
Corsair VSA2GSDS667C4 2GB
Corsair VSA2GSDS667C4 2GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
内存RAM
Kingston ACR16D3LS1KNG/4G 4GB
Kingston ACR16D3LS1KNG/4G 4GB
Essencore Limited IM48GU88N21-FFFHM 8GB
Essencore Limited IM48GU88N21-FFFHM 8GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-3200C16-16GTZN 16GB
G Skill Intl F4-3200C16-16GTZN 16GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology CT8G4SFS824A.C8FDD1 8GB
Crucial Technology CT8G4SFS824A.C8FDD1 8GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Corsair CMK32GX4M2D3200C16 16GB
Corsair CMK32GX4M2D3200C16 16GB
内存RAM
Ramaxel Technology RMR5040ED58E9W1600 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Kingston HP32D4U8S8ME-8X 8GB
Kingston HP32D4U8S8ME-8X 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Crucial Technology CT8G4SFS8213.M8FA 8GB
Crucial Technology CT8G4SFS8213.M8FA 8GB
内存RAM