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A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology BL8G36C16U4B.M8FE1 8GB

A-DATA Technology ADOVE1A0834E 1GB vs Crucial Technology BL8G36C16U4B.M8FE1 8GB

总分
star star star star star
A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分
star star star star star
Crucial Technology BL8G36C16U4B.M8FE1 8GB

Crucial Technology BL8G36C16U4B.M8FE1 8GB

差异 规格 评论

差异

A-DATA Technology ADOVE1A0834E 1GB 需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB
报告一个错误
Crucial Technology BL8G36C16U4B.M8FE1 8GB 需要考虑的原因
Crucial Technology BL8G36C16U4B.M8FE1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 94
    左右 -248% 更低的延时
  • 更快的读取速度，GB/s
    20.1 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.7 left arrow 1,165.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology BL8G36C16U4B.M8FE1 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    94 left arrow 27
  • 读取速度，GB/s
    1,882.0 left arrow 20.1
  • 写入速度，GB/s
    1,165.4 left arrow 16.7
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    305 left arrow 3759

A-DATA Technology ADOVE1A0834E 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB

Crucial Technology BL8G36C16U4B.M8FE1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

G Skill Intl F3-12800CL7-4GBXM 4GB
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Mushkin 99[2/7/4]205F 8GB
Mushkin 99[2/7/4]205F 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Corsair CM4X4GF2666Z16K4 4GB
Corsair CM4X4GF2666Z16K4 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M378A5143EB1-CPB 4GB
Samsung M378A5143EB1-CPB 4GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology BL8G36C16U4B.M8FE1 8GB
Crucial Technology BL8G36C16U4B.M8FE1 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Kingston 9905678-027.A00G 8GB
Kingston 9905678-027.A00G 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
SK Hynix HMA851S6DJR6N-XN 4GB
SK Hynix HMA851S6DJR6N-XN 4GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N
内存RAM
SK Hynix HMT351S6EFR8C-PB 4GB
SK Hynix HMT351S6EFR8C-PB 4GB
SK Hynix HMT351S6BFR8C-H9 4GB
SK Hynix HMT351S6BFR8C-H9 4GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Crucial Technology BL16G32C16U4B.M16FE 16GB
Crucial Technology BL16G32C16U4B.M16FE 16GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
Samsung M378A5244BB0-CRC 4GB
Samsung M378A5244BB0-CRC 4GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Ramaxel Technology RMSA3260ME78HAF-2666 8GB
Ramaxel Technology RMSA3260ME78HAF-2666 8GB
内存RAM
Elpida EBJ41UF8BDW0-GN-F 4GB
Elpida EBJ41UF8BDW0-GN-F 4GB
Crucial Technology CT8G4SFRA32A.M4FE 8GB
Crucial Technology CT8G4SFRA32A.M4FE 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
内存RAM
Kingston 99U5471-052.A00LF 8GB
Kingston 99U5471-052.A00LF 8GB
Samsung M386A8K40BMB-CPB 64GB
Samsung M386A8K40BMB-CPB 64GB
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