RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-3200C16-4GTZB 4GB
比较
A-DATA Technology ADOVE1A0834E 1GB vs G Skill Intl F4-3200C16-4GTZB 4GB
总分
A-DATA Technology ADOVE1A0834E 1GB
总分
G Skill Intl F4-3200C16-4GTZB 4GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB
报告一个错误
需要考虑的原因
G Skill Intl F4-3200C16-4GTZB 4GB
报告一个错误
低于PassMark测试中的延时,ns
30
94
左右 -213% 更低的延时
更快的读取速度,GB/s
17.1
1
测试中的平均数值
更快的写入速度,GB/s
13.0
1,165.4
测试中的平均数值
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-3200C16-4GTZB 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
94
30
读取速度,GB/s
1,882.0
17.1
写入速度,GB/s
1,165.4
13.0
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
305
3014
A-DATA Technology ADOVE1A0834E 1GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB
G Skill Intl F4-3200C16-4GTZB 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMT41GU7BFR8A-PB 8GB
G Skill Intl F4-3200C16-16GSXWB 16GB
Kingston 99U5403-036.A00G 4GB
G Skill Intl F4-2400C14-4GRK 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Apacer Technology 78.CAGPN.DF40B 8GB
Samsung M471A5244CB0-CWE 4GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Avant Technology W642GU42J7240N8 16GB
SK Hynix HMT151R7TFR4C-H9 4GB
A-DATA Technology AO1P26KC8T1-BXFSHC 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666
Samsung M471B5674QH0-YK0 2GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
Samsung M393B1G70BH0-YK0 8GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-3000C15-8GRR 8GB
Kingston KHX2400C11D3/4GX 4GB
G Skill Intl F4-3000C14-8GTZR 8GB
Kingston ACR512X64D3S13C9G 4GB
Kingston 9905624-013.A00G 8GB
Samsung M378B5773CH0-CH9 2GB
Kingston 99U5700-014.A00G 8GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
报告一个错误
×
Bug description
Source link