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A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-3333C16-16GTZKW 16GB

A-DATA Technology ADOVE1A0834E 1GB vs G Skill Intl F4-3333C16-16GTZKW 16GB

总分
star star star star star
A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分
star star star star star
G Skill Intl F4-3333C16-16GTZKW 16GB

G Skill Intl F4-3333C16-16GTZKW 16GB

差异 规格 评论

差异

A-DATA Technology ADOVE1A0834E 1GB 需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB
报告一个错误
G Skill Intl F4-3333C16-16GTZKW 16GB 需要考虑的原因
G Skill Intl F4-3333C16-16GTZKW 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 94
    左右 -309% 更低的延时
  • 更快的读取速度，GB/s
    17.2 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.9 left arrow 1,165.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-3333C16-16GTZKW 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    94 left arrow 23
  • 读取速度，GB/s
    1,882.0 left arrow 17.2
  • 写入速度，GB/s
    1,165.4 left arrow 12.9
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    305 left arrow 3227

A-DATA Technology ADOVE1A0834E 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB

G Skill Intl F4-3333C16-16GTZKW 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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Kingston ACR256X64D3S1333C9 2GB
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内存RAM
A-DATA Technology ADOVE1A0834E 1GB
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G Skill Intl F4-3333C16-16GTZKW 16GB
G Skill Intl F4-3333C16-16GTZKW 16GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
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内存RAM
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内存RAM
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内存RAM
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Samsung M3 78T5663RZ3-CE6 2GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM