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A-DATA Technology ADOVE1A0834E 1GB
Kingston 9905625-066.A00G 16GB

A-DATA Technology ADOVE1A0834E 1GB vs Kingston 9905625-066.A00G 16GB

总分
star star star star star
A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分
star star star star star
Kingston 9905625-066.A00G 16GB

Kingston 9905625-066.A00G 16GB

差异 规格 评论

差异

A-DATA Technology ADOVE1A0834E 1GB 需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB
报告一个错误
Kingston 9905625-066.A00G 16GB 需要考虑的原因
Kingston 9905625-066.A00G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 94
    左右 -194% 更低的延时
  • 更快的读取速度，GB/s
    15.2 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.2 left arrow 1,165.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology ADOVE1A0834E 1GB
Kingston 9905625-066.A00G 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    94 left arrow 32
  • 读取速度，GB/s
    1,882.0 left arrow 15.2
  • 写入速度，GB/s
    1,165.4 left arrow 10.2
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    305 left arrow 2882

A-DATA Technology ADOVE1A0834E 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB

Kingston 9905625-066.A00G 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905701-008.A00G 16GB
Kingston 9905701-008.A00G 16GB
内存RAM
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Transcend Information JM3200HLE-32G 32GB
Transcend Information JM3200HLE-32G 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Corsair CMK16GX4M1A2400C16 16GB
Corsair CMK16GX4M1A2400C16 16GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Dust Leopard DDR4-2400 C16 8GB 8GB
Dust Leopard DDR4-2400 C16 8GB 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Kingston 9905625-066.A00G 16GB
Kingston 9905625-066.A00G 16GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
G Skill Intl F4-2133C15-4GVR 4GB
G Skill Intl F4-2133C15-4GVR 4GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Corsair CMD64GX4M8B3200C16 8GB
Corsair CMD64GX4M8B3200C16 8GB
内存RAM
SK Hynix HMAA1GS6CJR6N-XN 8GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
Crucial Technology CT16G4SFS832A.M8FE 16GB
Crucial Technology CT16G4SFS832A.M8FE 16GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Zotac Technology Ltd OD48G32S816-ZHC 8GB
Zotac Technology Ltd OD48G32S816-ZHC 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Kingston HP32D4U8S8HD-8X 8GB
Kingston HP32D4U8S8HD-8X 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3600C16-8GTZ 8GB
G Skill Intl F4-3600C16-8GTZ 8GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Crucial Technology CT8G4DFD824A.M16FE 8GB
Crucial Technology CT8G4DFD824A.M16FE 8GB
内存RAM