RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
A-DATA Technology ADOVE1A0834E 1GB
Transcend Information JM2666HLG-16GK 8GB

A-DATA Technology ADOVE1A0834E 1GB vs Transcend Information JM2666HLG-16GK 8GB

总分
star star star star star
A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分
star star star star star
Transcend Information JM2666HLG-16GK 8GB

Transcend Information JM2666HLG-16GK 8GB

差异 规格 评论

差异

A-DATA Technology ADOVE1A0834E 1GB 需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB
报告一个错误
Transcend Information JM2666HLG-16GK 8GB 需要考虑的原因
Transcend Information JM2666HLG-16GK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 94
    左右 -213% 更低的延时
  • 更快的读取速度，GB/s
    16.1 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.4 left arrow 1,165.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
A-DATA Technology ADOVE1A0834E 1GB
Transcend Information JM2666HLG-16GK 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    94 left arrow 30
  • 读取速度，GB/s
    1,882.0 left arrow 16.1
  • 写入速度，GB/s
    1,165.4 left arrow 12.4
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    305 left arrow 3140

A-DATA Technology ADOVE1A0834E 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB

Transcend Information JM2666HLG-16GK 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Samsung V-GeN D4S8GL24A8 8GB
Samsung V-GeN D4S8GL24A8 8GB
内存RAM
Kingston KF3200C16D4/32GX 32GB
Kingston KF3200C16D4/32GX 32GB
A-DATA Technology AD4U240038G17-BHYA 8GB
A-DATA Technology AD4U240038G17-BHYA 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Micron Technology TEAMGROUP-UD4-3000 16GB
Micron Technology TEAMGROUP-UD4-3000 16GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston CBD32D4S2S1ME-8 8GB
Kingston CBD32D4S2S1ME-8 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3866C18-8GTZKW 8GB
G Skill Intl F4-3866C18-8GTZKW 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Kingston 9965640-015.A00G 32GB
Kingston 9965640-015.A00G 32GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
G Skill Intl F4-4400C18-8GTRS 8GB
G Skill Intl F4-4400C18-8GTRS 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMW16GX4M2C3000C15 8GB
Corsair CMW16GX4M2C3000C15 8GB
内存RAM
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43DB1-CTD 8GB
Crucial Technology BLE4G4D26AFEA.8FAD 4GB
Crucial Technology BLE4G4D26AFEA.8FAD 4GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Crucial Technology BLS8G4D240FSE.16FBD 8GB
Crucial Technology BLS8G4D240FSE.16FBD 8GB
内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
EVGA 16G-D4-2666-MR 4GB
EVGA 16G-D4-2666-MR 4GB
内存RAM
Crucial Technology CT16G4SFRA266.C8FB 16GB
Crucial Technology CT16G4SFRA266.C8FB 16GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
内存RAM