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A-DATA Technology AM1U16BC4P2-B19H 4GB
Samsung V-GeN D4S4GL32A8TL 4GB

A-DATA Technology AM1U16BC4P2-B19H 4GB vs Samsung V-GeN D4S4GL32A8TL 4GB

总分
star star star star star
A-DATA Technology AM1U16BC4P2-B19H 4GB

A-DATA Technology AM1U16BC4P2-B19H 4GB

总分
star star star star star
Samsung V-GeN D4S4GL32A8TL 4GB

Samsung V-GeN D4S4GL32A8TL 4GB

差异 规格 评论

差异

A-DATA Technology AM1U16BC4P2-B19H 4GB 需要考虑的原因
A-DATA Technology AM1U16BC4P2-B19H 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 58
    左右 53% 更低的延时
Samsung V-GeN D4S4GL32A8TL 4GB 需要考虑的原因
Samsung V-GeN D4S4GL32A8TL 4GB
报告一个错误
  • 更快的读取速度，GB/s
    18.5 left arrow 11.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.5 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AM1U16BC4P2-B19H 4GB
Samsung V-GeN D4S4GL32A8TL 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 58
  • 读取速度，GB/s
    11.2 left arrow 18.5
  • 写入速度，GB/s
    8.4 left arrow 9.5
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1967 left arrow 1998

A-DATA Technology AM1U16BC4P2-B19H 4GB RAM的比较

AMD R534G1601U1S 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB

Samsung V-GeN D4S4GL32A8TL 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Corsair CMD8GX3M2A2933C12 4GB
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内存RAM
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM