A-DATA Technology AM2L16BC4R1-B0AS 4GB

Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB vs Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

总分

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

总分

Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

差异规格评论

差异

A-DATA Technology AM2L16BC4R1-B0AS 4GB

需要考虑的原因
A-DATA Technology AM2L16BC4R1-B0AS 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 13% 更低的延时

Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

需要考虑的原因
Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

报告一个错误

更快的读取速度，GB/s

16.7 13.4

测试中的平均数值
更快的写入速度，GB/s

14.6 7.8

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 31
读取速度，GB/s

13.4 16.7
写入速度，GB/s

7.8 14.6
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2181 3509

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

Chun Well Technology Holding Limited CL22-22-22 D4-3200

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB

Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8G

Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

Crucial Technology BL8G32C16U4WL.M8FE1 8GB

Crucial Technology BL8G32C16U4WL.M8FE1 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Micron Technology 8R8F1G64HZ-2G3B1 8GB

Micron Technology 8R8F1G64HZ-2G3B1 8GB

Kingston 9905702-010.A00G 8GB

Kingston 9905702-010.A00G 8GB

Corsair CMK64GX4M4B3200C16 16GB

Corsair CMK64GX4M4B3200C16 16GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Crucial Technology CT4G4DFS8213.C8FAR2 4GB

Crucial Technology CT4G4DFS8213.C8FAR2 4GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Corsair CMK16GX4M4B3400C16 4GB

Corsair CMK16GX4M4B3400C16 4GB

Apacer Technology 78.B1GET.AU00C 4GB

Apacer Technology 78.B1GET.AU00C 4GB

Crucial Technology CT8G4DFS824A.C8FJ 8GB

Crucial Technology CT8G4DFS824A.C8FJ 8GB

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

Kingston ACR21D4S15HAG/8G 8GB

Kingston ACR21D4S15HAG/8G 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Kllisre M378A5143EB2-CRC 4GB

Kllisre M378A5143EB2-CRC 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

Chun Well Technology Holding Limited D4U1636181DC 16GB

Chun Well Technology Holding Limited D4U1636181DC 16GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

SK Hynix HMA81GU6MFR8N-UH 8GB

SK Hynix HMA81GU6MFR8N-UH 8GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Essencore Limited IM44GU48A30-FGGHAB 4GB

Essencore Limited IM44GU48A30-FGGHAB 4GB