A-DATA Technology AM2L16BC4R1-B0AS 4GB vs Corsair CM4X16GE2133C15S2 16GB

总分

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

总分

Corsair CM4X16GE2133C15S2 16GB

Corsair CM4X16GE2133C15S2 16GB

差异规格评论

差异

A-DATA Technology AM2L16BC4R1-B0AS 4GB

需要考虑的原因
A-DATA Technology AM2L16BC4R1-B0AS 4GB

报告一个错误

更快的写入速度，GB/s

7.8 6.8

测试中的平均数值

Corsair CM4X16GE2133C15S2 16GB

需要考虑的原因
Corsair CM4X16GE2133C15S2 16GB

报告一个错误

更快的读取速度，GB/s

13.5 13.4

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Corsair CM4X16GE2133C15S2 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 27
读取速度，GB/s

13.4 13.5
写入速度，GB/s

7.8 6.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2181 2172

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905403-444.A00LF 4GB

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Corsair CMSX64GX4M4A2400C16 16GB

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Samsung M3 78T2863QZS-CF7 1GB

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Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

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Samsung M393B5270CH0-CH9 4GB

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Micron Technology CT8G4DFD8213.16FA2 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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G Skill Intl F4-4000C17-8GTZRB 8GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Micron Technology 8ATF2G64HZ-3G2E1 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-4800C20-16GTZR 16GB

G Skill Intl F4-4800C20-16GTZR 16GB

A-DATA Technology VDQVE1B16 2GB

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ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB

ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB

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Corsair CMZ32GX3M4A1866C9 8GB

Essencore Limited IM48GU48N28-GGGHM 8GB

Essencore Limited IM48GU48N28-GGGHM 8GB

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Kingston HP16D3LS1KBGH/4G 4GB

Kingston 9905701-010.A00G 16GB

Kingston 9905701-010.A00G 16GB