A-DATA Technology AM2L16BC4R1-B0AS 4GB vs G Skill Intl F4-2133C15-4GRS 4GB

总分

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

总分

G Skill Intl F4-2133C15-4GRS 4GB

G Skill Intl F4-2133C15-4GRS 4GB

差异规格评论

差异

A-DATA Technology AM2L16BC4R1-B0AS 4GB

需要考虑的原因
A-DATA Technology AM2L16BC4R1-B0AS 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 33

左右 18% 更低的延时

G Skill Intl F4-2133C15-4GRS 4GB

需要考虑的原因
G Skill Intl F4-2133C15-4GRS 4GB

报告一个错误

更快的读取速度，GB/s

15.9 13.4

测试中的平均数值
更快的写入速度，GB/s

11.8 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AM2L16BC4R1-B0AS 4GB

G Skill Intl F4-2133C15-4GRS 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 33
读取速度，GB/s

13.4 15.9
写入速度，GB/s

7.8 11.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2181 2601

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A1K43BB2-CTD 8GB

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Micron Technology 16ATF4G64AZ-2G6B1 32GB

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Hynix Semiconductor (Hyundai Electronics) GKE800SO51208