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A-DATA Technology AM2L16BC4R1-B0AS 4GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
比较
A-DATA Technology AM2L16BC4R1-B0AS 4GB vs OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
总分
A-DATA Technology AM2L16BC4R1-B0AS 4GB
总分
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology AM2L16BC4R1-B0AS 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
30
左右 10% 更低的延时
需要考虑的原因
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
报告一个错误
更快的读取速度,GB/s
16
13.4
测试中的平均数值
更快的写入速度,GB/s
10.6
7.8
测试中的平均数值
更高的内存带宽,mbps
25600
12800
左右 2 更高的带宽
规格
完整的技术规格清单
A-DATA Technology AM2L16BC4R1-B0AS 4GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
30
读取速度,GB/s
13.4
16.0
写入速度,GB/s
7.8
10.6
内存带宽,mbps
12800
25600
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2181
3026
A-DATA Technology AM2L16BC4R1-B0AS 4GB RAM的比较
Kingston 99U5403-185.A00LF 8GB
Kingston 9905403-410.A00LF 4GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Micron Technology 8ATF51264AZ-2G1AY 4GB
SK Hynix HMA82GS6DJR8N-XN 16GB
Samsung M471A2K43EB1-CWE 16GB
SK Hynix HMA81GS6DJR8N-VK 8GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
报告一个错误
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