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A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-3000C16-16GTRG 16GB
比较
A-DATA Technology AM2U16BC4P2-B05B 4GB vs G Skill Intl F4-3000C16-16GTRG 16GB
总分
A-DATA Technology AM2U16BC4P2-B05B 4GB
总分
G Skill Intl F4-3000C16-16GTRG 16GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology AM2U16BC4P2-B05B 4GB
报告一个错误
低于PassMark测试中的延时,ns
26
28
左右 7% 更低的延时
需要考虑的原因
G Skill Intl F4-3000C16-16GTRG 16GB
报告一个错误
更快的读取速度,GB/s
18.4
14
测试中的平均数值
更快的写入速度,GB/s
16.1
9.1
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-3000C16-16GTRG 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
28
读取速度,GB/s
14.0
18.4
写入速度,GB/s
9.1
16.1
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2330
3772
A-DATA Technology AM2U16BC4P2-B05B 4GB RAM的比较
Kingston EBJ81UG8BBW0-GN-F 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3000C16-16GTRG 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Kingston 9905701-020.A00G 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-3000C16-16GTRG 16GB
Kingston KF552C40-16 16GB
Team Group Inc. DDR4 3000 4GB
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-3466C16-8GVR 8GB
Kingston 9965516-112.A00LF 16GB
Kingston 9905665-014.A00G 4GB
TwinMOS 8DPT5MK8-TATP 2GB
Hyundai Inc GR26C16S8K2HU416 8GB
Kingston KP4T2F-PSB 4GB
Crucial Technology CT8G4SFD824A.C16FHP 8GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-2400C15-4GRK 4GB
Samsung M378A1G43DB0-CPB 8GB
SK Hynix HMA81GU6CJR8N-VK 8GB
Kingston 9905403-134.A00LF 2GB
Corsair CMT128GX4M8X3600C18 16GB
Samsung M393B1K70CH0-CH9 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
Samsung M3 78T3354BZ0-CCC 256MB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
Kingston 99U5474-010.A00LF 2GB
Samsung M474A1G43EB1-CRC 8GB
Kingston KHX1600C10D3/8G 8GB
Samsung M471B1G73DB0-YK0 8GB
报告一个错误
×
Bug description
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