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A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-3600C19-16GVRB 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB vs G Skill Intl F4-3600C19-16GVRB 16GB

总分
star star star star star
A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

总分
star star star star star
G Skill Intl F4-3600C19-16GVRB 16GB

G Skill Intl F4-3600C19-16GVRB 16GB

差异 规格 评论

差异

A-DATA Technology AM2U16BC4P2-B05B 4GB 需要考虑的原因
A-DATA Technology AM2U16BC4P2-B05B 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 28
    左右 7% 更低的延时
G Skill Intl F4-3600C19-16GVRB 16GB 需要考虑的原因
G Skill Intl F4-3600C19-16GVRB 16GB
报告一个错误
  • 更快的读取速度，GB/s
    18.9 left arrow 14
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.2 left arrow 9.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-3600C19-16GVRB 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 28
  • 读取速度，GB/s
    14.0 left arrow 18.9
  • 写入速度，GB/s
    9.1 left arrow 16.2
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2330 left arrow 3835

A-DATA Technology AM2U16BC4P2-B05B 4GB RAM的比较

Kingston EBJ81UG8BBW0-GN-F 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F4-3600C19-16GVRB 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CM5S16GM4800A40K2 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Hyundai Inc AR32C16S8K2SU416R 8GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Corsair CMK64GX4M2Z4000C18 32GB
Corsair CMK64GX4M2Z4000C18 32GB
内存RAM
Qimonda 72T128420EFA3SB2 1GB
Qimonda 72T128420EFA3SB2 1GB
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Kingston KF2666C16S4/16G 16GB
内存RAM
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Crucial Technology BL16G32C16U4BL.M8FB1 16GB
Crucial Technology BL16G32C16U4BL.M8FB1 16GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Samsung M474A1G43DB0-CPB 8GB
Samsung M474A1G43DB0-CPB 8GB
内存RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
Kingston HX316C10F/4 4GB
Kingston HX316C10F/4 4GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Crucial Technology BL4G24C16U4B.8FE 4GB
Crucial Technology BL4G24C16U4B.8FE 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3300C16-16GTZ 16GB
G Skill Intl F4-3300C16-16GTZ 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
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Kingston KHX2666C16D4/32GX 32GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Samsung M471A1K43BB0-CPB 8GB
Samsung M471A1K43BB0-CPB 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KCRXJ6-MIE 16GB
Kingston KCRXJ6-MIE 16GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Samsung M378A2K43DB1-CTD 16GB
Samsung M378A2K43DB1-CTD 16GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Avant Technology W6451U66J5213ND 4GB
Avant Technology W6451U66J5213ND 4GB
内存RAM