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A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston 9965596-031.B00G 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB vs Kingston 9965596-031.B00G 8GB

总分
star star star star star
A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

总分
star star star star star
Kingston 9965596-031.B00G 8GB

Kingston 9965596-031.B00G 8GB

差异 规格 评论

差异

A-DATA Technology AM2U16BC4P2-B05B 4GB 需要考虑的原因
A-DATA Technology AM2U16BC4P2-B05B 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 31
    左右 16% 更低的延时
  • 更快的读取速度，GB/s
    14 left arrow 10.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.1 left arrow 7.9
    测试中的平均数值
Kingston 9965596-031.B00G 8GB 需要考虑的原因
Kingston 9965596-031.B00G 8GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston 9965596-031.B00G 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 31
  • 读取速度，GB/s
    14.0 left arrow 10.9
  • 写入速度，GB/s
    9.1 left arrow 7.9
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2330 left arrow 2444

A-DATA Technology AM2U16BC4P2-B05B 4GB RAM的比较

Kingston EBJ81UG8BBW0-GN-F 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Kingston 9965596-031.B00G 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMD8GX3M2A2933C12 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston 9965596-031.B00G 8GB
Kingston 9965596-031.B00G 8GB
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A-DATA Technology DDR3 1333+ 2GB
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Team Group Inc. TEAMGROUP-D4-3600 4GB
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Samsung M395T2863QZ4-CF76 1GB
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Corsair CMZ16GX3M2A2400C10 8GB
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Kingston KHX1600C9D3/8G 8GB
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Corsair CMW32GX4M4C3200C16 8GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
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内存RAM
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9965589-008.D02G 8GB
Kingston 9965589-008.D02G 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSB.8FADG 4GB
Crucial Technology BLS4G4D240FSB.8FADG 4GB
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内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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V-GEN D4M8GL26A8TS6 8GB
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