A-DATA Technology AM2U16BC4P2-B05B 4GB vs MemxPro Inc. D4S8GHIOFFC 8GB

总分

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

总分

MemxPro Inc. D4S8GHIOFFC 8GB

MemxPro Inc. D4S8GHIOFFC 8GB

差异规格评论

差异

A-DATA Technology AM2U16BC4P2-B05B 4GB

需要考虑的原因
A-DATA Technology AM2U16BC4P2-B05B 4GB

报告一个错误

更快的写入速度，GB/s

9.1 7.3

测试中的平均数值

MemxPro Inc. D4S8GHIOFFC 8GB

需要考虑的原因
MemxPro Inc. D4S8GHIOFFC 8GB

报告一个错误

更快的读取速度，GB/s

14.2 14

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AM2U16BC4P2-B05B 4GB

MemxPro Inc. D4S8GHIOFFC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 26
读取速度，GB/s

14.0 14.2
写入速度，GB/s

9.1 7.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2330 2013

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT8G4DFS8266.C8FD1 8GB

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G Skill Intl F4-4000C17-8GTRS 8GB

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PNY Electronics PNY 2GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Samsung M471B5673FH0-CF8 2GB

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Samsung M471A1A43CB1-CRC 8GB

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Kingston ACR16D3LS1NGG/4G 4GB

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Kingmax Semiconductor GLNH23F-18---------- 16GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Kingston MSI26D4S9S8HJ-8 8GB

Kingston MSI26D4S9S8HJ-8 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Crucial Technology CT8G4SFS824A.C8FE 8GB

Crucial Technology CT8G4SFS824A.C8FE 8GB

Kingston K1CXP8-MIE 16GB

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Samsung M471A2K43DB1-CWE 16GB

Samsung M471A2K43DB1-CWE 16GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

SK Hynix HMA81GS6JJR8N-VK 8GB

SK Hynix HMA81GS6JJR8N-VK 8GB