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A-DATA Technology AM2U16BC4P2-B05B 4GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB vs OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

总分
star star star star star
A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

总分
star star star star star
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

差异 规格 评论

差异

A-DATA Technology AM2U16BC4P2-B05B 4GB 需要考虑的原因
A-DATA Technology AM2U16BC4P2-B05B 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 27
    左右 4% 更低的延时
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB 需要考虑的原因
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.4 left arrow 14
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.5 left arrow 9.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AM2U16BC4P2-B05B 4GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 27
  • 读取速度，GB/s
    14.0 left arrow 17.4
  • 写入速度，GB/s
    9.1 left arrow 14.5
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2330 left arrow 3692

A-DATA Technology AM2U16BC4P2-B05B 4GB RAM的比较

Kingston EBJ81UG8BBW0-GN-F 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M395T2863QZ4-CF76 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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A-DATA Technology AM2U16BC4P2-B05B 4GB
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