A-DATA Technology AM2U16BC4P2-B05B 4GB vs Samsung M378A2K43DB1-CTD 16GB

总分

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

总分

Samsung M378A2K43DB1-CTD 16GB

Samsung M378A2K43DB1-CTD 16GB

差异规格评论

差异

A-DATA Technology AM2U16BC4P2-B05B 4GB

需要考虑的原因
A-DATA Technology AM2U16BC4P2-B05B 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 36

左右 28% 更低的延时

Samsung M378A2K43DB1-CTD 16GB

需要考虑的原因
Samsung M378A2K43DB1-CTD 16GB

报告一个错误

更快的读取速度，GB/s

15.3 14

测试中的平均数值
更快的写入速度，GB/s

11.9 9.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AM2U16BC4P2-B05B 4GB

Samsung M378A2K43DB1-CTD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 36
读取速度，GB/s

14.0 15.3
写入速度，GB/s

9.1 11.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2330 2981

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Team Group Inc. 16GB

Team Group Inc. 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Samsung M378A2K43DB1-CTD 16GB

Samsung M378A2K43DB1-CTD 16GB

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

G Skill Intl F4-3600C14-16GTRG 16GB

G Skill Intl F4-3600C14-16GTRG 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Kingston 9905599-029.A00G 4GB

Kingston 9905599-029.A00G 4GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Patriot Memory (PDP Systems) 3400 C16 Series 8GB

Patriot Memory (PDP Systems) 3400 C16 Series 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Essencore Limited IM4AGU88N24-FFFHMB 16GB

Essencore Limited IM4AGU88N24-FFFHMB 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung M471A2K43CB1-CTD 16GB

Samsung M471A2K43CB1-CTD 16GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Crucial Technology CT8G4SFD824A.C16FBD2 8GB

Crucial Technology CT8G4SFD824A.C16FBD2 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Team Group Inc. TEAMGROUP-UD4-2933 8GB

Team Group Inc. TEAMGROUP-UD4-2933 8GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M471A1K43CBCBCRC 8GB

Samsung M471A1K43CBCBCRC 8GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

G Skill Intl F4-3466C16-16GTZR 16GB

G Skill Intl F4-3466C16-16GTZR 16GB

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

Panram International Corporation M424016 4GB

Panram International Corporation M424016 4GB