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A-DATA Technology AM2U16BC4P2-B05B 4GB
Samsung M471A1K1KBB0-CPB 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB vs Samsung M471A1K1KBB0-CPB 8GB

总分
star star star star star
A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

总分
star star star star star
Samsung M471A1K1KBB0-CPB 8GB

Samsung M471A1K1KBB0-CPB 8GB

差异 规格 评论

差异

A-DATA Technology AM2U16BC4P2-B05B 4GB 需要考虑的原因
A-DATA Technology AM2U16BC4P2-B05B 4GB
报告一个错误
  • 更快的读取速度，GB/s
    14 left arrow 11.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.1 left arrow 5.5
    测试中的平均数值
Samsung M471A1K1KBB0-CPB 8GB 需要考虑的原因
Samsung M471A1K1KBB0-CPB 8GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AM2U16BC4P2-B05B 4GB
Samsung M471A1K1KBB0-CPB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 26
  • 读取速度，GB/s
    14.0 left arrow 11.7
  • 写入速度，GB/s
    9.1 left arrow 5.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, , CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2330 left arrow 1771

A-DATA Technology AM2U16BC4P2-B05B 4GB RAM的比较

Kingston EBJ81UG8BBW0-GN-F 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Samsung M471A1K1KBB0-CPB 8GB RAM的比较

Corsair CMD8GX3M2A2933C12 4GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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内存RAM
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Crucial Technology CT16G4DFD8266.C16FD1 16GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
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Corsair MK16GX4M2B3200C16 8GB
内存RAM