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A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB vs InnoDisk Corporation M4S0-4GSSNCIK 4GB

总分
star star star star star
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

总分
star star star star star
InnoDisk Corporation M4S0-4GSSNCIK 4GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB

差异 规格 评论

差异

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB 需要考虑的原因
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    45 left arrow 85
    左右 47% 更低的延时
  • 更快的读取速度，GB/s
    14.7 left arrow 11.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.1 left arrow 6.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 21300
    左右 1.2% 更高的带宽
InnoDisk Corporation M4S0-4GSSNCIK 4GB 需要考虑的原因
InnoDisk Corporation M4S0-4GSSNCIK 4GB
报告一个错误

规格

完整的技术规格清单
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 85
  • 读取速度，GB/s
    14.7 left arrow 11.3
  • 写入速度，GB/s
    11.1 left arrow 6.0
  • 内存带宽，mbps
    25600 left arrow 21300
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2556 left arrow 1118

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB RAM的比较

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
TwinMOS 8DHE3MN8-HATP 2GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
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Corsair CMR128GX4M8X3800C19 16GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Kingston KHX3466C17D4/16GX 16GB
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内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
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内存RAM
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内存RAM
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内存RAM
Samsung M395T5160QZ4-CE66 2GB
Samsung M395T5160QZ4-CE66 2GB
G Skill Intl F4-3400C16-8GTZSW 8GB
G Skill Intl F4-3400C16-8GTZSW 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
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内存RAM
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内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
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Corsair CMK192GX4M12P3200C16 16GB
内存RAM
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Kingston 9965662-016.A00G 16GB
G Skill Intl F4-3600C14-16GTZRA 16GB
G Skill Intl F4-3600C14-16GTZRA 16GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
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A-DATA Technology AX4S2800316G18-B 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C
Micron Technology 16ATF1G64HZ-2G1A2 8GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
内存RAM