A-DATA Technology DDR2 800G 2GB vs G Skill Intl F4-3200C16-4GVKB 4GB

总分

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

总分

G Skill Intl F4-3200C16-4GVKB 4GB

G Skill Intl F4-3200C16-4GVKB 4GB

差异规格评论

差异

A-DATA Technology DDR2 800G 2GB

需要考虑的原因
A-DATA Technology DDR2 800G 2GB

报告一个错误

更快的读取速度，GB/s

5 18

测试中的平均数值
更快的写入速度，GB/s

2,343.1 13.9

测试中的平均数值

G Skill Intl F4-3200C16-4GVKB 4GB

需要考虑的原因
G Skill Intl F4-3200C16-4GVKB 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 49

左右 -69% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DDR2 800G 2GB

G Skill Intl F4-3200C16-4GVKB 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 29
读取速度，GB/s

5,135.8 18.0
写入速度，GB/s

2,343.1 13.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

843 3049

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Golden Empire CL15-15-15 D4-2133 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB

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Corsair CMY16GX3M4A2133C8 4GB

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A-DATA Technology DOVF1B163G2G 2GB

Samsung M471A1K43CB1-CRCR 8GB

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Kingston 99U5471-012.A00LF 4GB

Kingston 99U5471-012.A00LF 4GB

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G Skill Intl F4-3000C15-8GTZ 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology BLS4G4D240FSC.8FBD 4GB

Crucial Technology BLS4G4D240FSC.8FBD 4GB

Corsair VS2GB1333D4 2GB

Corsair VS2GB1333D4 2GB

Crucial Technology BLS4G4D240FSC.8FBD2 4GB

Crucial Technology BLS4G4D240FSC.8FBD2 4GB