A-DATA Technology DDR2 800G 2GB vs Micron Technology 8ATF51264HZ-2G1B1 4GB

总分

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

总分

Micron Technology 8ATF51264HZ-2G1B1 4GB

Micron Technology 8ATF51264HZ-2G1B1 4GB

差异规格评论

差异

A-DATA Technology DDR2 800G 2GB

需要考虑的原因
A-DATA Technology DDR2 800G 2GB

报告一个错误

更快的读取速度，GB/s

5 14.3

测试中的平均数值
更快的写入速度，GB/s

2,343.1 10.9

测试中的平均数值

Micron Technology 8ATF51264HZ-2G1B1 4GB

需要考虑的原因
Micron Technology 8ATF51264HZ-2G1B1 4GB

报告一个错误

低于PassMark测试中的延时，ns

34 49

左右 -44% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DDR2 800G 2GB

Micron Technology 8ATF51264HZ-2G1B1 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 34
读取速度，GB/s

5,135.8 14.3
写入速度，GB/s

2,343.1 10.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

843 2201

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Crucial Technology CT16G4SFRA266.C8FB 16GB

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Kingston 9905316-106.A02LF 1GB

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A Force Manufacturing Ltd. UD-01G64V2133P 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Corsair CM4X16GC3600C18K2D 16GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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SK Hynix HMA41GR7MFR4N-TFTD 8GB

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Samsung M393B1K70CH0-CH9 8GB

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G Skill Intl F4-3000C16-8GVRB 8GB

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Samsung 1600 CL10 Series 8GB

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Crucial Technology BL8G26C16U4W.8FD 8GB

Crucial Technology BL8G26C16U4W.8FD 8GB

Corsair CMZ16GX3M2A2400C10 8GB

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Patriot Memory (PDP Systems) 3600 C14 Series 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Kingston 9905678-012.A00G 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB

GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3600C14-8GTRGB 8GB

G Skill Intl F4-3600C14-8GTRGB 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Crucial Technology CT8G4SFS824A.M8FD 8GB

Crucial Technology CT8G4SFS824A.M8FD 8GB

Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

Samsung M471A5143SB1-CRC 4GB

Samsung M471A5143SB1-CRC 4GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Corsair CMK32GX4M2B3000C15 16GB

Corsair CMK32GX4M2B3000C15 16GB