RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DDR2 800G 2GB
Samsung M391A1K43BB1-CRC 8GB
比较
A-DATA Technology DDR2 800G 2GB vs Samsung M391A1K43BB1-CRC 8GB
总分
A-DATA Technology DDR2 800G 2GB
总分
Samsung M391A1K43BB1-CRC 8GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology DDR2 800G 2GB
报告一个错误
更快的读取速度,GB/s
5
12
测试中的平均数值
需要考虑的原因
Samsung M391A1K43BB1-CRC 8GB
报告一个错误
低于PassMark测试中的延时,ns
26
49
左右 -88% 更低的延时
更快的写入速度,GB/s
5.5
2,343.1
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
A-DATA Technology DDR2 800G 2GB
Samsung M391A1K43BB1-CRC 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
49
26
读取速度,GB/s
5,135.8
12.0
写入速度,GB/s
2,343.1
5.5
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
843
1925
A-DATA Technology DDR2 800G 2GB RAM的比较
Corsair CMK16GX4M2B3200C16 8GB
G Skill Intl F4-4266C19-32GTZR 32GB
Samsung M391A1K43BB1-CRC 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M378B5673EH1-CF8 2GB
Kingston 9905700-011.A00G 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingston KHX2933C15D4/8GX 8GB
Kingston 99U5595-005.A00LF 2GB
Corsair CMD16GX4M2B3866C18 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Transcend Information TS1GLH72V1H 8GB
Micron Technology 16JTF1G64AZ-1G6E1 8GB
Kingston KHX2133C14D4/4G 4GB
Kingston 99U5595-005.A00LF 2GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Corsair CMK16GX4M4A2133C15 4GB
Kingston 9905403-156.A00LF 2GB
Kingston 9905700-046.A00G 16GB
Crucial Technology CT16G4DFD8266.C16FP 16GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Micron Technology 4ATS1G64HZ-2G3B1 8GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Crucial Technology CT8G4SFD824A.C16FDD2 8GB
A-DATA Technology DQVE1908 512MB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
Samsung M471B5173QH0-YK0 4GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
Crucial Technology CT51264BA1339.C16F 4GB
A-DATA Technology AO2P24HCST2-BW8S 16GB
报告一个错误
×
Bug description
Source link