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A-DATA Technology DDR2 800G 2GB
Wilk Elektronik S.A. IR2400D464L17/16G 16GB

A-DATA Technology DDR2 800G 2GB vs Wilk Elektronik S.A. IR2400D464L17/16G 16GB

总分
star star star star star
A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

总分
star star star star star
Wilk Elektronik S.A. IR2400D464L17/16G 16GB

Wilk Elektronik S.A. IR2400D464L17/16G 16GB

差异 规格 评论

差异

A-DATA Technology DDR2 800G 2GB 需要考虑的原因
A-DATA Technology DDR2 800G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 16.8
    测试中的平均数值
Wilk Elektronik S.A. IR2400D464L17/16G 16GB 需要考虑的原因
Wilk Elektronik S.A. IR2400D464L17/16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 49
    左右 -113% 更低的延时
  • 更快的写入速度，GB/s
    9.6 left arrow 2,343.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DDR2 800G 2GB
Wilk Elektronik S.A. IR2400D464L17/16G 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 23
  • 读取速度，GB/s
    5,135.8 left arrow 16.8
  • 写入速度，GB/s
    2,343.1 left arrow 9.6
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    843 left arrow 2726

A-DATA Technology DDR2 800G 2GB RAM的比较

Corsair CMK16GX4M2B3200C16 8GB
G Skill Intl F4-4266C19-32GTZR 32GB

Wilk Elektronik S.A. IR2400D464L17/16G 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Wilk Elektronik S.A. IR2400D464L17/16G 16GB
Wilk Elektronik S.A. IR2400D464L17/16G 16GB
内存RAM
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Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-3000C15-8GRK 8GB
G Skill Intl F4-3000C15-8GRK 8GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
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Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Micron Technology AFLD416EH1P 16GB
Micron Technology AFLD416EH1P 16GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
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Essencore Limited KD48GU881-26N190A 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Kingston 9965643-002.A01G 4GB
Kingston 9965643-002.A01G 4GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Apacer Technology 78.CAGQ7.ARC0B 8GB
Apacer Technology 78.CAGQ7.ARC0B 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
G Skill Intl F4-2400C15-8GRR 8GB
G Skill Intl F4-2400C15-8GRR 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Avant Technology J642GU42J7240N4 16GB
Avant Technology J642GU42J7240N4 16GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Corsair CMW64GX4M2E3200C16 32GB
Corsair CMW64GX4M2E3200C16 32GB
内存RAM
Samsung M471A1K43CB1-CTD 8GB
Samsung M471A1K43CB1-CTD 8GB
Kingston KF548C38-16 16GB
Kingston KF548C38-16 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology 78.B1GS6.AUC0B 4GB
Apacer Technology 78.B1GS6.AUC0B 4GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-3000C15-8GRRB 8GB
G Skill Intl F4-3000C15-8GRRB 8GB
内存RAM