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A-DATA Technology DDR3 1333G 2GB
G Skill Intl F4-2400C17-4GVR 4GB

A-DATA Technology DDR3 1333G 2GB vs G Skill Intl F4-2400C17-4GVR 4GB

总分
star star star star star
A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

总分
star star star star star
G Skill Intl F4-2400C17-4GVR 4GB

G Skill Intl F4-2400C17-4GVR 4GB

差异 规格 评论

差异

A-DATA Technology DDR3 1333G 2GB 需要考虑的原因
A-DATA Technology DDR3 1333G 2GB
报告一个错误
G Skill Intl F4-2400C17-4GVR 4GB 需要考虑的原因
G Skill Intl F4-2400C17-4GVR 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 40
    左右 -60% 更低的延时
  • 更快的读取速度，GB/s
    15.2 left arrow 13.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DDR3 1333G 2GB
G Skill Intl F4-2400C17-4GVR 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 25
  • 读取速度，GB/s
    13.6 left arrow 15.2
  • 写入速度，GB/s
    7.8 left arrow 12.0
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2097 left arrow 2740

A-DATA Technology DDR3 1333G 2GB RAM的比较

Golden Empire CL5-5-5DDR2 1GB
A-DATA Technology DDR4 3200 2OZ 4GB

G Skill Intl F4-2400C17-4GVR 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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G Skill Intl F2-5300CL4-1GBSA 1GB
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内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
G Skill Intl F4-2400C17-4GVR 4GB
G Skill Intl F4-2400C17-4GVR 4GB
内存RAM
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内存RAM
SK Hynix HMT425S6AFR6A-PB 2GB
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Avexir Technologies Corporation T-20181206 8GB
内存RAM
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Kingston 9905471-001.A01LF 2GB
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Nanya Technology NT8GA64D88AX3S-HR 8GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
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Kingmax Semiconductor GLLH22F-18KCGA------ 16GB
内存RAM
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Nanya Technology NT2GT64U8HD0BY-AD 2GB
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Patriot Memory (PDP Systems) PSD48G21332 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Crucial Technology BLS8G4D32AESEK.M8FE 8GB
Crucial Technology BLS8G4D32AESEK.M8FE 8GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
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内存RAM
Kingston 99U5428-063.A00LF 8GB
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Crucial Technology CT8G4SFS824A.C8FBR1 8GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
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Kingston 9965600-012.A02G 16GB
内存RAM