A-DATA Technology DDR3 1333G 2GB vs G Skill Intl F4-3600C16-8GTZNC 8GB

总分

A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

总分

G Skill Intl F4-3600C16-8GTZNC 8GB

G Skill Intl F4-3600C16-8GTZNC 8GB

差异规格评论

差异

A-DATA Technology DDR3 1333G 2GB

需要考虑的原因
A-DATA Technology DDR3 1333G 2GB

报告一个错误

G Skill Intl F4-3600C16-8GTZNC 8GB

需要考虑的原因
G Skill Intl F4-3600C16-8GTZNC 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 40

左右 -54% 更低的延时
更快的读取速度，GB/s

19.5 13.6

测试中的平均数值
更快的写入速度，GB/s

17.2 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DDR3 1333G 2GB

G Skill Intl F4-3600C16-8GTZNC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 26
读取速度，GB/s

13.6 19.5
写入速度，GB/s

7.8 17.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2097 3840

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Gold Key Technology Co Ltd GKE800UD102408-2666 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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Samsung M378B5173BH0-CH9 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMH32GX4M4D3600C18 8GB

Corsair CMH32GX4M4D3600C18 8GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

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Essencore Limited KD4AGU880-36A180X 16GB

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Hexon Technology Pte Ltd HEXON 1GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

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Crucial Technology CT8G4SFS824A.C8FJ 8GB