A-DATA Technology DDR3 1333G 2GB vs G Skill Intl F4-4400C16-8GTZR 8GB

总分

A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

总分

G Skill Intl F4-4400C16-8GTZR 8GB

G Skill Intl F4-4400C16-8GTZR 8GB

差异规格评论

差异

A-DATA Technology DDR3 1333G 2GB

需要考虑的原因
A-DATA Technology DDR3 1333G 2GB

报告一个错误

G Skill Intl F4-4400C16-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-4400C16-8GTZR 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 40

左右 -48% 更低的延时
更快的读取速度，GB/s

21.9 13.6

测试中的平均数值
更快的写入速度，GB/s

19.1 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DDR3 1333G 2GB

G Skill Intl F4-4400C16-8GTZR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 27
读取速度，GB/s

13.6 21.9
写入速度，GB/s

7.8 19.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2097 4044

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471B5173DB0-YK0 4GB

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Samsung M393B1K70CH0-CH9 8GB

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SK Hynix HYMP112U64CP8-S6 1GB

Kingston KHX3200C20S4/16G 16GB

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Kingston 9905403-437.A01LF 4GB

Kingston 9905403-437.A01LF 4GB

Crucial Technology BLS4G4D26BFSE.8FE 4GB

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Corsair CMY8GX3M2A2666C10 4GB

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Corsair CMW16GX4M2Z4000C18 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

Crucial Technology CT8G4DFRA266.C4FE 8GB

Crucial Technology CT8G4DFRA266.C4FE 8GB