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A-DATA Technology DDR3 1333G 2GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB

A-DATA Technology DDR3 1333G 2GB vs Micron Technology 16ATF2G64HZ-2G3B2 16GB

总分
star star star star star
A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

总分
star star star star star
Micron Technology 16ATF2G64HZ-2G3B2 16GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

差异 规格 评论

差异

A-DATA Technology DDR3 1333G 2GB 需要考虑的原因
A-DATA Technology DDR3 1333G 2GB
报告一个错误
Micron Technology 16ATF2G64HZ-2G3B2 16GB 需要考虑的原因
Micron Technology 16ATF2G64HZ-2G3B2 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 40
    左右 -67% 更低的延时
  • 更快的读取速度，GB/s
    16.6 left arrow 13.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.6 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DDR3 1333G 2GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 24
  • 读取速度，GB/s
    13.6 left arrow 16.6
  • 写入速度，GB/s
    7.8 left arrow 12.6
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2097 left arrow 2969

A-DATA Technology DDR3 1333G 2GB RAM的比较

Golden Empire CL5-5-5DDR2 1GB
A-DATA Technology DDR4 3200 2OZ 4GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M393B1K70QB0-CK0 8GB
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内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
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内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Micron Technology 36ASF4G72PZ-2G3A1 32GB
Micron Technology 36ASF4G72PZ-2G3A1 32GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
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G Skill Intl F4-3200C16-16GRS 16GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
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Essencore Limited IM44GU48N28-GGGHM 4GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
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Avant Technology W642GU42J2320NH 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK64GX4M4B3466C16 16GB
Corsair CMK64GX4M4B3466C16 16GB
内存RAM
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
SK Hynix HMA81GS6AFR8N-UH 8GB
SK Hynix HMA81GS6AFR8N-UH 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
SK Hynix HMA82GU7MFR8N-TF 16GB
SK Hynix HMA82GU7MFR8N-TF 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
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Samsung M378A5143TB2-CTD 4GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Samsung 9905599-020.A00G 16GB
Samsung 9905599-020.A00G 16GB
内存RAM
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
Samsung SF4721G4CKHH6DFSDS 8GB
Samsung SF4721G4CKHH6DFSDS 8GB
内存RAM