A-DATA Technology DDR3 1600 4GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

A-DATA Technology DDR3 1600 4GB vs Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

总分

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

总分

Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

差异规格评论

差异

A-DATA Technology DDR3 1600 4GB

需要考虑的原因
A-DATA Technology DDR3 1600 4GB

报告一个错误

Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

需要考虑的原因
Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 41

左右 -11% 更低的延时
更快的读取速度，GB/s

15.4 14

测试中的平均数值
更快的写入速度，GB/s

12.5 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DDR3 1600 4GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 37
读取速度，GB/s

14.0 15.4
写入速度，GB/s

8.5 12.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2324 3075

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Corsair CMK16GX4M2K4000C19 8GB

Corsair CMK16GX4M2K4000C19 8GB

Corsair CM2X2048-6400C5 2GB

Corsair CM2X2048-6400C5 2GB

G Skill Intl F4-3200C14-8GTRG 8GB

G Skill Intl F4-3200C14-8GTRG 8GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Kingston 9905700-024.A00G 8GB

Kingston 9905700-024.A00G 8GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Kingston 9905678-033.A00G 4GB

Kingston 9905678-033.A00G 4GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Crucial Technology CT16G4SFD824A.M16FB 16GB

Crucial Technology CT16G4SFD824A.M16FB 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Corsair CMT16GX4M2C3466C16 8GB

Corsair CMT16GX4M2C3466C16 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Crucial Technology CT4G4DFS8213.C8FBD2 4GB

Crucial Technology CT4G4DFS8213.C8FBD2 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Corsair CMW64GX4M4C3200C16 16GB

Corsair CMW64GX4M4C3200C16 16GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

G Skill Intl F4-3600C16-32GTZR 32GB

G Skill Intl F4-3600C16-32GTZR 32GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Kingston 9905713-030.A00G 8GB

Kingston 9905713-030.A00G 8GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

G Skill Intl F4-4000C14-8GTZR 8GB

G Skill Intl F4-4000C14-8GTZR 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

G Skill Intl F4-3466C16-8GVR 8GB

G Skill Intl F4-3466C16-8GVR 8GB