A-DATA Technology DDR3 1600 4GB vs G Skill Intl F4-2133C15-4GRK 4GB

总分

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

总分

G Skill Intl F4-2133C15-4GRK 4GB

G Skill Intl F4-2133C15-4GRK 4GB

差异规格评论

差异

A-DATA Technology DDR3 1600 4GB

需要考虑的原因
A-DATA Technology DDR3 1600 4GB

报告一个错误

更快的读取速度，GB/s

14 13.5

测试中的平均数值

G Skill Intl F4-2133C15-4GRK 4GB

需要考虑的原因
G Skill Intl F4-2133C15-4GRK 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 41

左右 -52% 更低的延时
更快的写入速度，GB/s

10.7 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DDR3 1600 4GB

G Skill Intl F4-2133C15-4GRK 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 27
读取速度，GB/s

14.0 13.5
写入速度，GB/s

8.5 10.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2324 2689

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Crucial Technology CB8GU2400.C8ET 8GB

Crucial Technology CB8GU2400.C8ET 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Crucial Technology BLS4G4D26BFSB.8FD2 4GB

Crucial Technology BLS4G4D26BFSB.8FD2 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Kingston HP32D4U2S1ME-8 8GB

Kingston HP32D4U2S1ME-8 8GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

G Skill Intl F4-3466C16-8GVR 8GB

G Skill Intl F4-3466C16-8GVR 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

G Skill Intl F4-4000C19-16GTZKK 16GB

G Skill Intl F4-4000C19-16GTZKK 16GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Transcend Information TS1GLH64V4B 8GB

Transcend Information TS1GLH64V4B 8GB

Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Samsung M471A2G43AB2-CWE 16GB

Samsung M471A2G43AB2-CWE 16GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Kingston 9905663-021.A00G 16GB

Kingston 9905663-021.A00G 16GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

G Skill Intl F4-2133C15-4GRK 4GB

G Skill Intl F4-2133C15-4GRK 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F4-2400C15-4GVR 4GB

G Skill Intl F4-2400C15-4GVR 4GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Micron Technology 4ATF51264AZ-3G2J1 4GB

Micron Technology 4ATF51264AZ-3G2J1 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology TEAMGROUP-UD4-2400 16GB

Micron Technology TEAMGROUP-UD4-2400 16GB