A-DATA Technology DDR3 1600 4GB vs G Skill Intl F4-4266C16-8GTZR 8GB

总分

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

总分

G Skill Intl F4-4266C16-8GTZR 8GB

G Skill Intl F4-4266C16-8GTZR 8GB

差异规格评论

差异

A-DATA Technology DDR3 1600 4GB

需要考虑的原因
A-DATA Technology DDR3 1600 4GB

报告一个错误

G Skill Intl F4-4266C16-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-4266C16-8GTZR 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 41

左右 -64% 更低的延时
更快的读取速度，GB/s

25.2 14

测试中的平均数值
更快的写入速度，GB/s

19.5 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DDR3 1600 4GB

G Skill Intl F4-4266C16-8GTZR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 25
读取速度，GB/s

14.0 25.2
写入速度，GB/s

8.5 19.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2324 4167

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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EVGA 16G-D4-2400-MR 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Kingston 99U5678-029.A00G 8GB

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Corsair CMR64GX4M8C3200C16 8GB

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Samsung M393B5270CH0-CH9 4GB

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Kingston 9965667-001.A00G 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

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Corsair CMK128GX4M8A2400C14 16GB

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Kingston 9905678-177.A00G 8GB

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Kingston 9905403-174.A00LF 2GB

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Corsair CMW128GX4M4D3600C18 32GB