A-DATA Technology DDR3 1600 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB

A-DATA Technology DDR3 1600 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB

总分

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB

差异规格评论

差异

A-DATA Technology DDR3 1600 4GB

需要考虑的原因
A-DATA Technology DDR3 1600 4GB

报告一个错误

更快的读取速度，GB/s

14 13.8

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 41

左右 -41% 更低的延时
更快的写入速度，GB/s

11.0 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DDR3 1600 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 29
读取速度，GB/s

14.0 13.8
写入速度，GB/s

8.5 11.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2324 2690

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Smart Modular SH564128FH8NZQNSCG 4GB

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Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

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Samsung M378B5273CH0-CH9 4GB

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Panram International Corporation D4U2666P-8G 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Corsair CMK32GX4M4A2800C16 8GB

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Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

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G Skill Intl F4-2666C15-8GVB 8GB

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SK Hynix HYMP164U64CP6-Y5 512MB

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Kingston KVR533D2N4 512MB

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