A-DATA Technology DDR3 1600 4GB vs Ramaxel Technology RMUA5120ME86H9F-2666 4GB

总分

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

总分

Ramaxel Technology RMUA5120ME86H9F-2666 4GB

Ramaxel Technology RMUA5120ME86H9F-2666 4GB

差异规格评论

差异

A-DATA Technology DDR3 1600 4GB

需要考虑的原因
A-DATA Technology DDR3 1600 4GB

报告一个错误

Ramaxel Technology RMUA5120ME86H9F-2666 4GB

需要考虑的原因
Ramaxel Technology RMUA5120ME86H9F-2666 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 41

左右 -41% 更低的延时
更快的读取速度，GB/s

15.5 14

测试中的平均数值
更快的写入速度，GB/s

9.3 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DDR3 1600 4GB

Ramaxel Technology RMUA5120ME86H9F-2666 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 29
读取速度，GB/s

14.0 15.5
写入速度，GB/s

8.5 9.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2324 2202

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Crucial Technology CT8G4DFS6266.M4FE 8GB

Crucial Technology CT8G4DFS6266.M4FE 8GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Corsair CMW64GX4M8C3200C16 8GB

Corsair CMW64GX4M8C3200C16 8GB

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

Micron Technology 8ATF1G64HZ-2G2G1 8GB

Micron Technology 8ATF1G64HZ-2G2G1 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Crucial Technology BLS8G4D30AESEK.M8FE1 8GB

Crucial Technology BLS8G4D30AESEK.M8FE1 8GB

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

Corsair CMU32GX4M4C3000C15 8GB

Corsair CMU32GX4M4C3000C15 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMK16GX4M2K4266C16 8GB

Corsair CMK16GX4M2K4266C16 8GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Corsair CMK16GX4M1A2666C16 16GB

Corsair CMK16GX4M1A2666C16 16GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CMW64GX4M8C3000C15 8GB

Corsair CMW64GX4M8C3000C15 8GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

G Skill Intl F4-3600C17-16GTZ 16GB

G Skill Intl F4-3600C17-16GTZ 16GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Micron Technology 16ATF2G64HZ-3G2J1 16GB

Micron Technology 16ATF2G64HZ-3G2J1 16GB

Kingston 9905403-437.A01LF 4GB

Kingston 9905403-437.A01LF 4GB

G Skill Intl F4-3200C14-8GTZ 8GB

G Skill Intl F4-3200C14-8GTZ 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

A-DATA Technology AO1P32NCSV1-BEWS 16GB

A-DATA Technology AO1P32NCSV1-BEWS 16GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

G Skill Intl F4-4800C19-8GTZRC 8GB

G Skill Intl F4-4800C19-8GTZRC 8GB