A-DATA Technology DDR3 1866 2OZ 4GB vs Corsair CM4X16GE2400Z16K4 16GB

总分

A-DATA Technology DDR3 1866 2OZ 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

总分

Corsair CM4X16GE2400Z16K4 16GB

Corsair CM4X16GE2400Z16K4 16GB

差异规格评论

差异

A-DATA Technology DDR3 1866 2OZ 4GB

需要考虑的原因
A-DATA Technology DDR3 1866 2OZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 37

左右 43% 更低的延时
更快的读取速度，GB/s

17.8 16.3

测试中的平均数值

Corsair CM4X16GE2400Z16K4 16GB

需要考虑的原因
Corsair CM4X16GE2400Z16K4 16GB

报告一个错误

更快的写入速度，GB/s

11.1 10.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DDR3 1866 2OZ 4GB

Corsair CM4X16GE2400Z16K4 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

21 37
读取速度，GB/s

17.8 16.3
写入速度，GB/s

10.0 11.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2771 3294

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Ramos Technology EWB8GB681CA3-16IC 8GB

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Samsung M471B5273EB0-CK0 4GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Corsair CMSX32GX4M2A2666C18 16GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB

SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB

Apacer Technology 78.01GA0.9K5 1GB

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Corsair CMU32GX4M2A2400C14 16GB

Corsair CMU32GX4M2A2400C14 16GB

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

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G Skill Intl F4-3200C16-8GRKB 8GB

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Kingston 9905403-444.A00LF 4GB

G Skill Intl F4-3000C16-8GISB 8GB

G Skill Intl F4-3000C16-8GISB 8GB